| PART |
Description |
Maker |
| SUP65P06-20 SUB65P06-20 |
From old datasheet system
P-Channel Enhancement-Mode Trans
P-Channel 60-V (D-S), 175C MOSFET
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,65A I(D),TO-220AB
P-Channel MOSFET
30V N-Channel PowerTrench MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology Inc
Vishay Intertechnology,Inc.
|
| 3N191 X3N190-91 3N190 3N190-91 X3N191 |
50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench MOSFET
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
|
Calogic LLC
Calogic LLC
CALOGIC[Calogic, LLC]
|
| IRFBL10N60A |
N-Channel SMPS MOSFET(N娌?? 寮??妯″??垫?MOS?烘?搴??,?ㄤ?楂????C-DC杞????
HEXFET Power MOSFET
HEXFET? Power MOSFET
11 A, 600 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-263VAR
|
IRF[International Rectifier]
VISHAY SILICONIX
|
| FDS4435 FDS4435D84Z FDS4435F011 |
P-Channel Logic Level PowerTrenchTM MOSFET 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
9000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
8.8 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SUP45N03-13L |
N-Channel Enhancement-Mode Transistor
N-Channel 30-V (D-S), 175C MOSFET
N-Channel MOSFET
N-Channel 30-V (D-S), 175C MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| AP4525GEH |
30V N-Channel PowerTrench MOSFET 15 A, 40 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, TO-252
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
|
| IRHG6110 IRHG63110 IRHG6110P IRHG6110N IRHG6110PBF |
Simple Drive Requirements
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET
100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
1 A, 100 V, 0.7 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-036AB
|
IRF[International Rectifier]
|
| FDS4141 |
P-Channel PowerTrench? MOSFET -40V, -10.8A, 13.0mΩ
P-Channel PowerTrench㈢ MOSFET -40V, -10.8A, 13.0mヘ
-40V P-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 10.8 A, 40 V, 0.013 ohm, P-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| ZXM64P035G ZXM64P035GTA ZXM64P035GTC |
P-channel MOSFET
35V P-CHANNEL ENHANCEMENT MODE MOSFET 3800 mA, 35 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ZETEX[Zetex Semiconductors]
Zetex Semiconductor PLC
|
| STD2NB80 6424 STD2NB80T4 |
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK PowerMESH MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 1.9AI（四）|52AA
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| ISB-A27-0 |
150 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Ultrathin Miniature Package 4-channel N-channel MOSFET Array
|
Sanyo Semicon Device
|
|
